TDA2030 - Datasheet Catalog

® TDA2030 

14W Hi-Fi AUDIO AMPLIFIER 

DESCRIPTION 

The TDA2030 is a monolithic integrated circuit in 

Pentawatt® package, intended for use as a low 

frequency class AB amplifier. Typically it provides 

14W output power (d = 0.5%) at 14V/4Ω; at ± 14V 

or 28V, the guaranteed output power is 12W on a 

4Ω load and 8W on a 8Ω (DIN45500). 

The TDA2030 provides high output current and has 

very low harmonic and cross-over distortion. 

Further the device incorporates an original (and 

patented) short circuit protection system comprising 

an arrangement for automatically limiting the 

dissipated power so as to keep the working point 

of the output transistors within their safe operating 

area. A conventional thermal shut-down system is 

also included. 

Pentawatt 

ORDERING NUMBERS : TDA2030H 

TDA2030V 

ABSOLUTE MAXIMUM RATINGS 

Symbol Parameter Value Unit 

V s Supply voltage ± 18 (36) V 

V i Input voltage V s 

V i Differential input voltage ± 15 V 

I o Output peak current (internally limited) 3.5 A 

P tot Power dissipation at T case = 90°C 20 W 

T stg , T j Stoprage and junction temperature -40 to 150 °C 

TYPICAL APPLICATION 

June 1998 

1/12

TDA2030 

PIN CONNECTION (top view) 

+V S 

OUTPUT 

-V S 

INVERTING INPUT 

NON INVERTING INPUT 

TEST CIRCUIT 

2/12


THERMAL DATA 

Symbol Parameter Value Unit 

R th j-case Thermal resistance junction-case max 3 °C/W 

ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V , Tamb = 25°C unless otherwise 

specified) for single Supply refer to fig. 15 Vs = 28V 

Symbol Parameter Test conditions Min. Typ. Max. Unit 

V s Supply voltage 

± 6 

12 

± 18 

36 

V 

I d 

Quiescent drain current 

40 60 mA 

I b Input bias current 0.2 2 µA 

V os Input offset voltage 

V s = ± 18V (Vs = 36V) 

± 2 ± 20 mV 

I os Input offset current ± 20 ± 200 nA 

P o Output power d = 0.5% G v = 30 dB 

f = 40 to 15,000 Hz 

R L = 4Ω 

R L = 8Ω 

12 

8 

14 

9 

W 

W 

d = 10% 

f = 1 KHz 

R L = 4Ω 

R L = 8Ω 

G v = 30 dB 

18 

11 

W 

W 

d Distortion P o = 0.1 to 12W 

R L = 4Ω G v = 30 dB 

f = 40 to 15,000 Hz 0.2 0.5 % 

P o = 0.1 to 8W 

R L = 8Ω G v = 30 dB 

f = 40 to 15,000 Hz 0.1 0.5 % 

B 

Power Bandwidth 

(-3 dB) 

G v = 30 dB 

P o = 12W 

R L = 4Ω 

10 to 140,000 Hz 

R i Input resistance (pin 1) 0.5 5 MΩ 

G v Voltage gain (open loop) 90 dB 

G v Voltage gain (closed loop) f = 1 kHz 29.5 30 30.5 dB 

e N Input noise voltage B = 22 Hz to 22 KHz 3 10 µV 

i N Input noise current 80 200 pA 

SVR Supply voltage rejection R L = 4Ω G v = 30 dB 

R g = 22 kΩ 

V ripple = 0.5 V eff 

f ripple = 100 Hz 

40 50 dB 

I d Drain current P o = 14W 

P o = W 

R L = 4Ω 

R L = 8Ω 

900 

500 

mA 

mA 

3/12


Figure 1. Output power vs. 

supply voltage 

Figure 2. Output power vs. 

supply voltage 

Figure 3. Distortion vs. 

output power 


output power 


output power 


frequency 


frequency 

Figure 8. Frequency response 

with different values 

of the rolloff capacitor C8 

(see fig. 13) 

Figure 9. Quiescent current 

vs. supply voltage 

4/12


Figure 10. Supply voltage 

rejection vs. voltage gain 

Figure 11. Power dissipation 

and efficiency vs. output 

power 

Figure 12. Maximum power 

dissipation vs. supply voltage 

(sine wave operation) 

APPLICATION INFORMATION 

Figure 13. Typical amplifier 

with split power supply 

Figure 14. P.C. board and component layout for 

the circuit of fig. 13 (1 : 1 scale) 

5/12


APPLICATION INFORMATION (continued) 

Figure 15. Typical amplifier 

with single power supply 

Figure 16. P.C. board and component layout for 

the circuit of fig. 15 (1 : 1 scale) 

Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = ±14V) 

6/12


PRACTICAL CONSIDERATIONS 

Printed circuit board 

The layout shown in Fig. 16 should be adopted by 

the designers. If different layouts are used, the 

ground points of input 1 and input 2 must be well 

decoupled from the ground return of the output in 

which a high current flows. 

Assembly suggestion 

No electrical isolation is needed between the 

package and the heatsink with single supply voltage 

configuration. 

Application suggestions 

The recommended values of the components are 

those shown on application circuit of fig. 13. 

Different values can be used. The following table 

can help the designer. 

Component 

Recomm. 

value 

Purpose 

Larger than 

recommended value 

Smaller than 


R1 22 kΩ Closed loop gain 

setting 

Increase of gain Decrease of gain (*) 

R2 680 Ω Closed loop gain 

setting 

R3 22 kΩ Non inverting input 

biasing 

Decrease of gain (*) 

Increase of input 

impedance 

Increase of gain 

Decrease of input 

impedance 

R4 1 Ω Frequency stability Danger of osccilat. at 

high frequencies 

with induct. loads 

R5 ≅ 3 R2 Upper frequency 

cutoff 

C1 1 µF Input DC 

decoupling 

C2 22 µF Inverting DC 

decoupling 

C3, C4 0.1 µF Supply voltage 

bypass 

C5, C6 100 µF Supply voltage 

bypass 

Poor high frequencies 

attenuation 

Danger of 

oscillation 

Increase of low 

frequencies cutoff 



Danger of 

oscillation 

Danger of 

oscillation 

C7 0.22 µF Frequency stability Danger of oscillation 

C8 

≅ 

1 

2π B R1 

Upper frequency 

cutoff 

Smaller bandwidth 

Larger bandwidth 

D1, D2 1N4001 To protect the device against output voltage spikes 

(*) Closed loop gain must be higher than 24dB 

7/12


SINGLE SUPPLY APPLICATION 

Component 

Recomm. 

value 

Purpose 

Larger than 


Smaller than 


R1 150 kΩ Closed loop gain 

setting 

Increase of gain Decrease of gain (*) 

R2 4.7 kΩ Closed loop gain 

setting 

R3 100 kΩ Non inverting input 

biasing 

Decrease of gain (*) 

Increase of input 

impedance 

Increase of gain 

Decrease of input 

impedance 

R4 1 Ω Frequency stability Danger of osccilat. at 

high frequencies 

with induct. loads 

R A /R B 100 kΩ Non inverting input Biasing Power Consumption 

C1 1 µF Input DC 

decoupling 

C2 22 µF Inverting DC 

decoupling 

C3 0.1 µF Supply voltage 

bypass 

C5 100 µF Supply voltage 

bypass 





Danger of 

oscillation 

Danger of 

oscillation 

C7 0.22 µF Frequency stability Danger of oscillation 

C8 

≅ 

1 

2π B R1 

Upper frequency 

cutoff 

Smaller bandwidth 

Larger bandwidth 

D1, D2 1N4001 To protect the device against output voltage spikes 

(*) Closed loop gain must be higher than 24dB 

8/12


SHORT CIRCUIT PROTECTION 

The TDA2030 has an original circuit which limits the 

current of the output transistors. Fig. 18 shows that 

the maximum output current is a function of the 

collector emitter voltage; hence the output transistors 

work within their safe operating area (Fig. 2). 

This function can therefore be considered as being 

peak power limiting rather than simple current limiting. 

It reduces the possibility that the device gets damaged 

during an accidental short circuit from AC 

output to ground. 

Figure 18. Maximum 

output current vs. 

voltage [VCEsat] across 

each output transistor 

Figure 19. Safe operating area and 

collector characteristics of the 

protected power transistor 

THERMAL SHUT-DOWN 

The presence of a thermal limiting circuit offers the 

following advantages: 

1. An overload on the output (even if it is permanent), 

or an above limit ambient temperature can 

be easily supported since the Tj cannot be 

higher than 150°C. 

2. The heatsink can have a smaller factor of safety 

compared with that of a conventional circuit. 

There is no possibility of device damage due to 

high junction temperature. If for any reason, the 

junction temperature increases up to 150°C, the 

thermal shut-down simply reduces the power 

dissipation at the current consumption. 

The maximum allowable power dissipation depends 

upon the size of the external heatsink (i.e. its 

thermal resistance); fig. 22 shows this dissipable 

power as a function of ambient temperature for 

different thermal resistance. 

9/12


Figure 20. Output power and 

drain current vs. case 

temperature (RL = 4Ω) 

Figure 21. Output power and 

drain current vs. case 

temperature (RL = 8Ω) 

Figure 22. Maximum 

allowable power dissipation 

vs. ambient temperature 

Figure 23. Example of heat-sink 

Dimension : suggestion. 

The following table shows the length that 

the heatsink in fig. 23 must have for several 

values of Ptot and Rth. 

Ptot (W) 12 8 6 

Length of heatsink 

(mm) 

60 40 30 

Rth of heatsink 

(° C/W) 

4.2 6.2 8.3 

10/12


PENTAWATT PACKAGE MECHANICAL DATA 

DIM. 

mm 

inch 

MIN. TYP. MAX. MIN. TYP. MAX. 

A 4.8 0.189 

C 1.37 0.054 

D 2.4 2.8 0.094 0.110 

D1 1.2 1.35 0.047 0.053 

E 0.35 0.55 0.014 0.022 

E1 0.76 1.19 0.030 0.047 

F 0.8 1.05 0.031 0.041 

F1 1 1.4 0.039 0.055 

G 3.2 3.4 3.6 0.126 0.134 0.142 

G1 6.6 6.8 7 0.260 0.268 0.276 

H2 10.4 0.409 

H3 10.05 10.4 0.396 0.409 

L 17.55 17.85 18.15 0.691 0.703 0.715 

L1 15.55 15.75 15.95 0.612 0.620 0.628 

L2 21.2 21.4 21.6 0.831 0.843 0.850 

L3 22.3 22.5 22.7 0.878 0.886 0.894 

L4 1.29 0.051 

L5 2.6 3 0.102 0.118 

L6 15.1 15.8 0.594 0.622 

L7 6 6.6 0.236 0.260 

L9 0.2 0.008 

M 4.23 4.5 4.75 0.167 0.177 0.187 

M1 3.75 4 4.25 0.148 0.157 0.167 

V4 

40° (typ.) 

Dia 3.65 3.85 0.144 0.152 

L 

V 

L1 

L8 

V1 

V 

R 

V3 

R 

E 

M1 

V 

V 

A 

B 

C 

L5 

D1 

L2 

L3 

D 

R 

V4 

M 

H2 

V4 

E 

F 

E1 

H3 

H1 

G 

G1 

Dia. 

L7 

L6 

F1 

F 

H2 

RESIN BETWEEN 

LEADS 

L9 

V4 

11/12


Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of 

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted 

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to 

change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not 

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved 

STMicroelectronics GROUP OF COMPANIES 

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12/12

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TDA2030 - Datasheet Catalog

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